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JTEC Corporation’s Plasma CVM Technology

Plasma Chemical Vaporization Machining
(Plasma CVM)

JTEC Corporation provides innovative solutions in semiconductor and quartz wafer planarization processing using Plasma Chemical Vaporization Machining (Plasma CVM) technology. Plasma CVM is a technology with excellent features of nano-level processing accuracy and no process alteration layer (no damage to the surface of the workpiece).

Plasma CVM process: Etching, gasifying, and planarizing quartz surfaces with plasmaized reactive gas.
Plasma CVM process: Etching, gasifying, and planarizing quartz surfaces with plasmaized reactive gas

Advantages of our Plasma CVM

POINT

Numerical Control Technology

Nano-level processing accuracy

High-precision planarization process
Reduction of thickness variation

POINT

Atomic-scale processing

No process alteration layer is generated(Damage-less)

Contribution to quality improvement and electrical characteristics

POINT

Chemical reaction

Suitable for various wafers

Crystal (SiO2), silicon (Si),
SOI, GaN, etc.

Advantages of Plasma CVM

Plasma CVM is a unique technology that uses only chemical reactions as its processing principle, which is distinct from CMP and ion beam processing, which remove by mechanical action. Plasma CVM achieves high-precision planarization that cannot be achieved by CMP and does not cause damage as ion beam processing does. Plasma CVM can contribute to process simplification and cost reduction, as post-processing cleaning may not be necessary depending on the subsequent process.

Improvement of wafer performance

Further planarization of wafers after CMP

Improved wafer quality

Provides a high quality surface without the worry of process alteration layer

Reduces wafer manufacturing costs

Contributes to cost reduction by simplifying the process

Complementary relationship with CMP

Plasma CVM significantly improves the planarity of wafers polished by CMP.
By combining CVM and CMP in a complementary process, wafers of higher quality than ever before can be obtained.

Polishing by CMP

Polishes wafer surfaces to improve roughness, high polishing rate

Plasma CVM for better planarity

Improvement of wafer flatness by numerically controlled processing, removal of process alteration layer generated by CMP

Complementary relationship between CMP and plasma CVM
Complementary relationship between CMP and Plasma CVM

Environmental Considerations

Plasma CVM is a wafer processing by gas phase chemical reaction, and although exhaust gas treatment is necessary, it does not use chemicals that incur wastewater treatment costs.
It is a solution that realizes high-quality, high-performance wafers in a dry environment.

Please click the button below to contact us with any questions or for more information.

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Principle of Plasma CVM that realizes atomic-scale processing

Plasma CVM Processing Principle

Excellent processing efficiency

Chemical reactions using high-density neutral radicals from high-pressure plasma enable processing with higher processing efficiency than conventional plasma etching, contributing to higher productivity.

Atomic-scale high-precision processing

Plasma CVM can generate plasma locally, enabling machining with high spatial resolution. This makes it an excellent match for numerically controlled machining, and it achieves excellent planarization of wafers through atomic-scale high-precision machining.。

Realizes damage-free wafer processing surface

Plasma CVM, which is characterized by processing by chemical reactions, does not produce a process alteration layer on the processed surface of the wafer. This contributes to higher quality and performance of electronic components using wafers processed by Plasma CVM.

Examples of Plasma CVM Processing

Quartz crystal

Pre-processed quartz wafer: commercially available 4inch (100mm)　
Measurement range: Area within a circle of 100mm diameter

BEFORE

Crystal wafer thickness distribution before plasma CVM

Pre-processing thickness distribution
TTV: 102 nm

AFTER

Thickness distribution of a quartz wafer after processing by plasma CVM

Thickness distribution after processing
TTV: 18 nm

SOI

Pre-processed SOI wafer: commercially available 8inch (200mm)
Thin film SOI wafer (SOI layer: 100 nm, embedded oxide layer: 200 nm)
Measurement points: Area within a 190mm diameter circle, 5.5mm grid

BEFORE

Thickness data of SOI wafer before processing by plasma CVM

Thickness of SOI layer before processing
Average thickness: 97.5 nm
TTV: 9.4 nm

AFTER

Thickness data after SOI wafer processing for plasma CVM

Thickness of SOI layer after processing
Average thickness: 7.5 nm
TTV: 3 nm

Improvement of TTV of quartz and SOI by nano-level control

TTV: Total Thickness Variation
The difference between the maximum and minimum thicknesses in the flatness application area of a wafer

Introduction of Plasma CVM Systems

Proposal for further improvement of quality and performance of various types of wafers

Wafer Planarization Plasma CVM Standalone Type
Stand-alone type
(Standard type for development and small-lot production)
Wafer Planarization Plasma CVM System Type
System type
(Fully automated type for mass production)

Improved productivity

All processes, from wafer removal from the cassette, thickness measurement, processing, and data storage, are automated. Efficient production is possible without manpower.

Cost Reduction

Compact design minimizes He gas usage and significantly reduces running costs. This system is also environmentally friendly.

Reliable Traceability

All thickness data before and after processing is stored in the system. Quality control is assured.

Features of Plasma CVM Products

■JC100　
Stand-alone type
(Standard type for development and small-lot production)

・Stand-alone type
・Suitable for customers who wish to independently study Plasma CVM
・Load-lock chamber reduces the time required to change samples and enables efficient continuous processing.
・Thickness measuring device is included.

■JC2000
System type
(Fully automatic type for mass production)

・Equipped with a processing unit and a measuring unit, this automatic system calculates the amount of processing based on the measurement data and performs processing.
・System configuration for mass-production processing
・Wafer transfer in the system is performed by transfer robot.
・High throughput is achieved by using multiple processing chambers (two chambers for JC2000).

Steps up to System Installation

STEP

Inquiry

Accepts questions regarding Plasma CVM technology, system, etc.

STEP

Technology introduction

Visit or web conference, depending on your request

STEP

Sample prototyping and evaluation

Test processing is available at any time

STEP

Proposal for rough estimate, detailed system specifications, etc.

We propose the optimal system to meet your needs.

Plasma CVM system consists of a process chamber for processing, a load lock chaber, and a thickness measurement unit.
We can propose optimal system configurations for customers seeking to improve processing capacity and shorten takt time.
If you are interested in producing high-quality, high-performance wafers efficiently and at low cost, please click the Inquiry button below to tell us about your needs.

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Plasma CVM System Configuration Example

PCVM Configuration

Plasma CVM system general specifications

Plasma Chemical Vaporization Machining
(Plasma CVM)		 JC100 (Plasma CVM processing system) JC2000 (Plasma CVM automated machining system)
Basic configuration Process chamber 1 chamber configuration with plasma electrode 2 chamber configuration with plasma electrode
Load lock chamber 1 chamber configuration 2-chamber configuration
Degree of vacuum Achievable vacuum 10 Pa
Gas type He / SF6 for process, N2 for purge
Plasma power source 13.56 MHz / Max. 300 W
Control unit PLC control (partly PC control)
Thickness measurement unit Spectral interferometry (for wafer thicknesses from 20 to 100 µm)
Peripheral system
(Option)		 Tray stage － Multi-stage loading of trays up to 4 inch size
Transport Robot － 4-axis (X-axis, Y-axis, Z-axis, θ-axis) robot
Dimensions W2000 mm × D750 mm × H1600 mm W2000 mm × D3700 mm × H2200 mm (2-chamber configuration)
Weight Approx. 1000 kg Approx. 2500 kg (2-chamber configuration)
Utility Power source 3-phase AC200 V, 30 A x 1 system 3-phase AC200V 30 A x 2 systems, single-phase AC100V 15 A
Instrumentation Air 0.4～0.6 MPa

*Please contact us for wafer size.

Company Profile

Company Name [Trade Name] JTEC Corporation
President and Representative Director Takashi Tsumura
Description of Business Design, manufacture and sales of X-ray mirrors for synchrotron radiation facilities
Development, design, manufacture and sales of automated cell culture system
Development, design, manufacture, and sales of various automated systems
Development, manufacturing, and sales of surface processing of various materials
Support services related to regenerative medicine
Capital stock 837,948,000 yen (as of December 31, 2023: consolidated)
Establishment 1993/12/21
Location of head office 2-5-38, Saito Yamabuki, Ibaraki, Osaka 567-0086, Japan
TEL . 072-643-2292  (Representative)
TEL . 072-655-2785  (IR Inquiries)
FAX. 072-643-2391
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