{"id":4710,"date":"2025-10-20T10:24:42","date_gmt":"2025-10-20T01:24:42","guid":{"rendered":"https:\/\/jteccorp.wdkb.jp\/?page_id=4710"},"modified":"2026-03-30T17:10:11","modified_gmt":"2026-03-30T08:10:11","slug":"device","status":"publish","type":"page","link":"https:\/\/www.j-tec.co.jp\/english\/device\/","title":{"rendered":"Device Development"},"content":{"rendered":"\n
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Advancing into the Semiconductor
Industry with JTEC CORPORATION’s
Proprietary Technology <\/h1>\n

JTEC CORPORATION develops and manufactures High-Speed, Ultra-Precision Polishing Technologies for a wide range of semiconductor materials and hard-to-machine wafers, such as DIAMOND, used in semiconductor devices and next-generation electronic components, along with the specialized system that implements these technologies. <\/p>\n <\/div>\n <\/div>\n <\/section>\n

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Discover Our Technology<\/h2>\n Discover Our Technology<\/span>\n <\/div>\n
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\n Technology – 01<\/span>\n \n

Plasma CVM
Plasma Chemical Vaporization Machining<\/span>\n <\/h3>\n <\/div>\n

Plasma CVM is a dry etching technique that utilizes plasma-activated reactive gases to process surfaces with atomic-level control. By combining this method with numerical control, it is possible to suppress thickness variation across an entire quartz substrate to 10 nm or less. <\/p>\n <\/a>\n <\/div>\n

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\n Technology – 02<\/span>\n \n

PAP
Plasma Assisted Polishing <\/span>\n <\/h3>\n <\/div>\n

PAP (Plasma-Assisted Polishing) is a proprietary polishing technology that employs plasma-induced surface modification of the workpiece, specifically designed for hard materials such as DIAMOND. Compared to conventional mechanical polishing, it achieves a higher polishing rate while producing surfaces with minimal damage and defects. <\/p>\n <\/a>\n <\/div>\n

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\n Technology – 03<\/span>\n \n

ECMP
Electro-Chemical Mechanical Polishing <\/span>\n <\/h3>\n <\/div>\n

ECMP (Electro-chemical Mechanical Polishing) is a process developed as an alternative to CMP, specifically for polishing SiC. By using an ion-conductive pad, this method eliminates the need for chemical solutions, providing a safe and environmentally friendly process. A polishing rate of 20 \u00b5m\/h has been achieved. <\/p>\n <\/a>\n <\/div>\n

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\n Technology – 04<\/span>\n \n

CARE
CAtalyst Referred Etching<\/span>\n <\/h3>\n <\/div>\n

CARE (Catalyst Referred Etching) is a technology that achieves atomic-level surface finishing using Only Pure Water with Metal Catalyst action, delivering a surface roughness of 0.1 nm RMS or less. When applied as the final step after CMP, CARE enhances the performance and reliability of semiconductor wafers. In addition, this process is also used for finishing the reflective surfaces of our high-precision X-ray mirrors. <\/p>\n <\/a>\n <\/div>\n <\/div>\n <\/div>\n <\/section>\n

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Discover Our Products<\/h2>\n Discover Our Products<\/span>\n <\/div>\n
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\n \"Plasma\n <\/div>\n
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New Possibilities for Semiconductor and Quartz Wafer Planarization
– Plasma CVM <\/h3>\n

Our Plasma CVM systems address a broad spectrum of requirements, from R&D to high-volume production. We offer a range of models designed for high-precision wafer planarization, contributing to enhanced productivity, cost reduction, and improved traceability. <\/p>\n <\/div>\n <\/a>\n \n

\n \"PAP\"\n <\/div>\n
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High-speed, high-precision planarization of various diamond surfaces \u2013 PAP<\/h3>\n

PAP (Plasma Assisted Polishing) is a polishing technology that activates the surface using plasma during machining. It is particularly well suited for finishing hard materials such as DIAMOND. Compared to conventional diamond-abrasive polishing, PAP offers higher efficiency and produces surfaces free from subsurface damage. This makes it a highly promising solution for polishing DIAMOND Substrates used in next-generation power devices.<\/p>\n <\/div>\n <\/a>\n \n

\n \"ECMP\"\n <\/div>\n
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High-efficiency, low environmental impact, low cost
\u2014 ECMP, a new technology for SiC polishing<\/h3>\n

ECMP is a polishing technology that uses an electrochemical reaction to anodically oxidize the SiC surface, temporarily softening it for efficient removal. It achieves a high processing speed of 20 \u00b5m\/h, and uses an ion-conductive composite pad containing a solid electrolyte\u2014without the need for chemical solutions\u2014reducing environmental impact and cost. We propose ECMP as an alternative process to CMP for SiC wafer intermediate finishing to final finishing.<\/p>\n <\/div>\n <\/a>\n <\/div>\n <\/div>\n <\/section>\n","protected":false},"excerpt":{"rendered":"

Advancing into the Semiconductor Industry with JTEC CORPORATION’s Proprietary Technology JTEC CORPORATIO […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":26,"comment_status":"closed","ping_status":"closed","template":"page-device.php","meta":[],"acf":[],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/4710"}],"collection":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/comments?post=4710"}],"version-history":[{"count":26,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/4710\/revisions"}],"predecessor-version":[{"id":7757,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/4710\/revisions\/7757"}],"wp:attachment":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/media?parent=4710"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}