{"id":4776,"date":"2025-10-20T11:43:55","date_gmt":"2025-10-20T02:43:55","guid":{"rendered":"https:\/\/jteccorp.wdkb.jp\/?page_id=4776"},"modified":"2026-05-22T11:28:41","modified_gmt":"2026-05-22T02:28:41","slug":"plasma-cvm","status":"publish","type":"page","link":"https:\/\/www.j-tec.co.jp\/english\/device\/plasma-cvm\/","title":{"rendered":"Plasma CVM(Plasma Chemical Vaporization Machining)"},"content":{"rendered":"<section class=\"pcvm-mv\">\n<div class=\"pcvm-mv__bg\"><img src=\"\/assets\/img\/plasma-cvm\/mv.webp?v2\" alt=\"\" \/><\/div>\n<div class=\"pcvm-mv__content\">\n<div class=\"pcvm-mv__image\"><img src=\"\/assets\/img\/plasma-cvm\/mv-item.webp\" alt=\"\" \/><\/div>\n<div class=\"pcvm-mv__text\">\n<h1 class=\"pcvm-mv__title\"><span class=\"pcvm-mv__title-main\">Semiconductor and Quartz Wafers <br \/>New Possibilities for Planarization<\/span> <span class=\"pcvm-mv__title-sub\"> <span class=\"large\">Plasma CVM<\/span><\/span><\/h1>\n<div class=\"pcvm-mv__description\">\n<p>Plasma CVM (Chemical Vaporization Machining) is a dry etching technique that uses plasma under several kpa to an atmospheric pressure. High-density, highly reactive radicals are generated locally to chemically etch atoms on the surface of the workpiece. Because the amount of processing can be controlled locally according to wafer thickness variation, it is possible to suppress thickness variation of 10 nm or less (TTV), which has been impossible with conventional processing methods. This method is used for processing Si wafers and quartz wafers.<\/p>\n<\/div>\n<div class=\"pcvm-mv__info\">\n<div class=\"pcvm-mv__info-item left\">\n<h3 class=\"pcvm-mv__info-title\">Workpiece<\/h3>\n<p class=\"pcvm-mv__info-text\">SiO<sub>2<\/sub> (Quartz), Si, SiC, GaN<\/p>\n<\/div>\n<div class=\"pcvm-mv__info-divider\">\u00a0<\/div>\n<div class=\"pcvm-mv__info-item right\">\n<h3 class=\"pcvm-mv__info-title\">Applications<\/h3>\n<ul class=\"pcvm-mv__info-text\">\n<li>\u30fbUniform thickness of quartz substrate (TTV &lt; 10 nm)<\/li>\n<li>\u30fbUniformity of Si layer in the SOI thin film<\/li>\n<\/ul>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/section>\n<div class=\"l-detail-content\">\n<section class=\"c-section pcvm-intro\"><a id=\"knowledge\" class=\"u-scroll-point\"><\/a>\n<p>\u00a0<\/p>\n<div class=\"pcvm-intro__content\">\n<div class=\"pcvm-intro__text\">\n<h2 class=\"c-title l2 \">Plasma CVM Technology<br \/>Developed by JTEC CORPORATION<\/h2>\n<h3 class=\"pcvm-intro__subtitle\">Plasma CVM (Plasma Chemical Vaporization Machining)<\/h3>\n<p class=\"text\">JTEC CORPORATION provides innovative solutions in semiconductor and quartz wafer planarization processing using Plasma Chemical Vaporization Machining (Plasma CVM) technology. Plasma CVM is a technology with excellent features of nano-level processing accuracy and no process alteration layer (no damage to the surface of the workpiece).<\/p>\n<\/div>\n<div class=\"pcvm-intro__image\"><iframe loading=\"lazy\" title=\"YouTube video player\" src=\"https:\/\/www.youtube.com\/embed\/uFazfE03bSw?si=j59kx9JygyqXwgRd\" width=\"560\" height=\"315\" frameborder=\"0\" allowfullscreen=\"allowfullscreen\"><\/iframe><\/div>\n<\/div>\n<\/section>\n<section class=\"c-section pcvm-strength\">\n<h2 class=\"c-title pcvm-section-title\"><span class=\"pcvm-section-title__text\">Advantages of our Plasma CVM<\/span><\/h2>\n<div class=\"pcvm-strength__grid\">\n<div class=\"pcvm-strength__item\">\n<p class=\"pcvm-strength__label\">POINT<\/p>\n<div class=\"pcvm-strength__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-point01.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-strength__title\">Numerical Control Technology<\/h3>\n<p class=\"pcvm-strength__subtitle\">Nano-level processing accuracy<\/p>\n<p class=\"pcvm-strength__text\">High-precision planarization process<br class=\"pc\" \/>Reduction of thickness variation<\/p>\n<\/div>\n<div class=\"pcvm-strength__item\">\n<p class=\"pcvm-strength__label\">POINT<\/p>\n<div class=\"pcvm-strength__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-point02.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-strength__title\">Atomic-scale processing<\/h3>\n<p class=\"pcvm-strength__subtitle\">No process alteration layer is generated(Damage-less)<\/p>\n<p class=\"pcvm-strength__text\">Contribution to quality improvement and electrical characteristics<\/p>\n<\/div>\n<div class=\"pcvm-strength__item\">\n<p class=\"pcvm-strength__label\">POINT<\/p>\n<div class=\"pcvm-strength__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-point03.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-strength__title\">Chemical reaction<\/h3>\n<p class=\"pcvm-strength__subtitle\">Suitable for various wafers<\/p>\n<p class=\"pcvm-strength__text\">Quartz (SiO<sub>2<\/sub>), Silicon (Si),<br \/>SOI, GaN, etc.<\/p>\n<\/div>\n<\/div>\n<\/section>\n<section class=\"c-section pcvm-superiority\">\n<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Advantages of Plasma CVM<\/span><\/h2>\n<p class=\"pcvm-superiority__desc\">Plasma CVM is a unique technology that uses only chemical reactions as its processing principle, which is distinct from CMP and ion beam processing, which remove by mechanical action. Plasma CVM achieves high-precision planarization that cannot be achieved by CMP and does not cause damage as ion beam processing does. Plasma CVM can contribute to process simplification and cost reduction, as post-processing cleaning may not be necessary depending on the subsequent process.<\/p>\n<div class=\"pcvm-superiority__grid\">\n<div class=\"pcvm-superiority__card\">\n<div class=\"pcvm-superiority__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-cvm01.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-superiority__title\">Improvement of wafer performance<\/h3>\n<p class=\"pcvm-superiority__text\">Further planarization of wafers after CMP<\/p>\n<\/div>\n<div class=\"pcvm-superiority__card\">\n<div class=\"pcvm-superiority__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-cvm02.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-superiority__title\">Improved wafer quality<\/h3>\n<p class=\"pcvm-superiority__text\">Provides a high quality surface without the worry of process alteration layer<\/p>\n<\/div>\n<div class=\"pcvm-superiority__card\">\n<div class=\"pcvm-superiority__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-cvm03.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-superiority__title\">Reduces wafer manufacturing costs<\/h3>\n<p class=\"pcvm-superiority__text\">Contributes to cost reduction by simplifying the process<\/p>\n<\/div>\n<\/div>\n<\/section>\n<section class=\"c-section pcvm-cmp\">\n<div class=\"pcvm-cmp__bg\"><img src=\"\/assets\/img\/plasma-cvm\/bg-cmp.webp\" alt=\"\" \/><\/div>\n<div class=\"pcvm-cmp__content\">\n<h2 class=\"pcvm-section-title -white\"><span class=\"pcvm-section-title__text\">Complementary relationship with CMP<\/span><\/h2>\n<p class=\"pcvm-cmp__desc\">Plasma CVM significantly improves the planarity of wafers polished by CMP.<br \/>By combining CVM and CMP in a complementary process, wafers of higher quality than ever before can be obtained.<\/p>\n<div class=\"pcvm-cmp__flow\">\n<div class=\"pcvm-cmp__flow-item\">\n<div class=\"pcvm-cmp__flow-header yellow\">Polishing by CMP<\/div>\n<p class=\"pcvm-cmp__flow-text\">Polishes wafer surfaces to improve roughness, high polishing rate<\/p>\n<\/div>\n<div class=\"pcvm-cmp__flow-plus\">+<\/div>\n<div class=\"pcvm-cmp__flow-item\">\n<div class=\"pcvm-cmp__flow-header purple\">Plasma CVM for<br class=\"pc\" \/>better planarity<\/div>\n<p class=\"pcvm-cmp__flow-text\">Improvement of wafer flatness by numerically controlled processing,<br class=\"sp\" \/>removal of process alteration layer generated by CMP<\/p>\n<\/div>\n<div class=\"pcvm-cmp__flow-equal\">\uff1d<\/div>\n<div class=\"pcvm-cmp__flow-item img\">\n<div class=\"pcvm-cmp__flow-result-image\"><img src=\"\/assets\/img\/plasma-cvm\/cmpcvm_en.webp\" alt=\"\" \/><\/div>\n<p class=\"pcvm-cmp__flow-result-text\">Complementary relationship between CMP and Plasma CVM<\/p>\n<\/div>\n<\/div>\n<\/div>\n<\/section>\n<section class=\"c-section pcvm-environment\">\n<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Environmental Considerations<\/span><\/h2>\n<div class=\"pcvm-environment__box\">\n<p>Plasma CVM is a wafer processing by gas phase chemical reaction, and although exhaust gas treatment is necessary, it does not use chemicals that incur wastewater treatment costs. <br \/>It is a solution that realizes high-quality, high-performance wafers in a dry environment.<\/p>\n<\/div>\n<p class=\"pcvm-environment__contact-text\">Please click the button below to contact us with any questions or for more information.<\/p>\n<p><a class=\"pcvm-contact-button\" href=\"\/english\/contact\/plasma-cvm-contact\/\"> Contact Us <\/a><\/p>\n<\/section>\n<section class=\"c-section pcvm-features\">\n<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Principle of Plasma CVM that realizes atomic-scale processing<\/span><\/h2>\n<div class=\"pcvm-features__image\"><img src=\"\/assets\/img\/plasma-cvm\/cvm-superiority_en.webp\" alt=\"\" \/><\/div>\n<div class=\"pcvm-features__grid\">\n<div class=\"pcvm-features__card\">\n<h3 class=\"pcvm-features__title\">Excellent processing efficiency<\/h3>\n<p class=\"pcvm-features__text\">Chemical reactions using high-density neutral radicals from high-pressure plasma enable processing with higher processing efficiency than conventional plasma etching, contributing to higher productivity.<\/p>\n<\/div>\n<div class=\"pcvm-features__card\">\n<h3 class=\"pcvm-features__title\">Atomic-scale high-precision processing<\/h3>\n<p class=\"pcvm-features__text\">Plasma CVM can generate plasma locally, enabling machining with high spatial resolution. This makes it an excellent match for numerically controlled machining, and it achieves excellent planarization of wafers through atomic-scale high-precision machining.\u3002<\/p>\n<\/div>\n<div class=\"pcvm-features__card\">\n<h3 class=\"pcvm-features__title\">Realizes damage-free wafer processing surface<\/h3>\n<p class=\"pcvm-features__text\">Plasma CVM, which is characterized by processing by chemical reactions, does not produce a process alteration layer on the processed surface of the wafer. This contributes to higher quality and performance of electronic components using wafers processed by Plasma CVM.<\/p>\n<\/div>\n<\/div>\n<\/section>\n<section class=\"c-section pcvm-case-study\">\n<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Examples of Plasma CVM Processing<\/span><\/h2>\n<div class=\"pcvm-case-study__categories\">\n<div class=\"pcvm-case-study__category\">\n<div>\n<div class=\"pcvm-case-study__category-title\">\n<h3 class=\"c-title l2\">Quartz wafer<\/h3>\n<\/div>\n<p class=\"pcvm-case-study__category-note\">4-inch\/100mm Quartz wafer, pre-processed<br \/>Measurement Area: Full surface, edge 3mm excluded<\/p>\n<\/div>\n<div class=\"pcvm-case-study__cards\">\n<div>\n<div class=\"pcvm-case-study__card\">\n<div class=\"pcvm-case-study__card-header -before\">BEFORE<\/div>\n<div class=\"pcvm-case-study__card-image\"><img src=\"https:\/\/www.j-tec.co.jp\/wp-content\/uploads\/2026\/04\/Quartz_before_PCVM.webp\" alt=\"quartz wafer thickness distribution before plasma CVM\" \/><\/div>\n<\/div>\n<p class=\"pcvm-case-study__card-text\">Pre-processing thickness distribution<br \/>TTV: 102 nm<\/p>\n<\/div>\n<div>\n<div class=\"pcvm-case-study__card\">\n<div class=\"pcvm-case-study__card-header -after\">AFTER<\/div>\n<div class=\"pcvm-case-study__card-image\"><img src=\"https:\/\/www.j-tec.co.jp\/wp-content\/uploads\/2026\/04\/Quartz_after_PCVM.webp\" alt=\"Thickness distribution of a quartz wafer after processing by plasma CVM\" \/><\/div>\n<\/div>\n<p class=\"pcvm-case-study__card-text\">Thickness distribution after processing<br \/><mark>TTV: 18 nm<\/mark><\/p>\n<\/div>\n<\/div>\n<\/div>\n<div class=\"pcvm-case-study__category\">\n<div>\n<div class=\"pcvm-case-study__category-title\">\n<h3 class=\"c-title l2\">SOI<\/h3>\n<\/div>\n<p class=\"pcvm-case-study__category-note\">8-inch\/200mm SOI wafer, preporcessed<br \/>Measurement Area: diameter 190mm, grid 5.5mm<\/p>\n<\/div>\n<div class=\"pcvm-case-study__cards\">\n<div>\n<div class=\"pcvm-case-study__card\">\n<div class=\"pcvm-case-study__card-header -before\">BEFORE<\/div>\n<div class=\"pcvm-case-study__card-image\"><img src=\"https:\/\/www.j-tec.co.jp\/wp-content\/uploads\/2026\/04\/SOI_before_PCVM.webp\" alt=\"Thickness data of SOI wafer before processing by plasma CVM\" \/><\/div>\n<\/div>\n<p class=\"pcvm-case-study__card-text\">Thickness of SOI layer before processing<br \/>Average thickness: 97.5 nm<br \/>TTV: 9.4 nm<\/p>\n<\/div>\n<div>\n<div class=\"pcvm-case-study__card\">\n<div class=\"pcvm-case-study__card-header -after\">AFTER<\/div>\n<div class=\"pcvm-case-study__card-image\"><img src=\"https:\/\/www.j-tec.co.jp\/wp-content\/uploads\/2026\/04\/SOI_after_PCVM.webp\" alt=\"Thickness data after SOI wafer processing for plasma CVM\" \/><\/div>\n<\/div>\n<p class=\"pcvm-case-study__card-text\">Thickness of SOI layer after processing<br \/><mark>Average thickness: 7.5 nm<\/mark><br \/><mark>TTV: 3 nm<\/mark><\/p>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<div class=\"pcvm-case-study__note-box\">Significant Improvement in Thickness Uniformity<\/div>\n<p class=\"pcvm-case-study__note-detail\">TTV: Total Thickness Variation<br \/>The difference between the maximum and minimum thicknesses in the flatness application area of a wafer<\/p>\n<\/section>\n<section class=\"c-section pcvm-equipment\">\n<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Introduction of Plasma CVM Systems<br class=\"sp\" \/><\/span><\/h2>\n<p class=\"pcvm-equipment__desc\">Proposal for further improvement of quality and performance<br class=\"sp\" \/>of various types of wafers<\/p>\n<div class=\"pcvm-equipment__grid\">\n<div class=\"pcvm-equipment__item\">\n<div class=\"pcvm-equipment__image stand\"><img src=\"\/assets\/img\/plasma-cvm\/cvm-stand.webp\" alt=\"\" \/><\/div>\n<p class=\"pcvm-equipment__name\">Stand-alone type<br \/>(Standard type for development and small-lot production)<\/p>\n<\/div>\n<div class=\"pcvm-equipment__item\">\n<div class=\"pcvm-equipment__image system\"><img src=\"\/assets\/img\/plasma-cvm\/cvm-system.webp\" alt=\"\" \/><\/div>\n<p class=\"pcvm-equipment__name\">System type<br \/>(Fully automated type for mass production)<\/p>\n<\/div>\n<\/div>\n<div class=\"pcvm-equipment__features\">\n<div class=\"pcvm-equipment__feature-card\">\n<h3 class=\"pcvm-equipment__feature-title\">Improved productivity<\/h3>\n<p class=\"pcvm-equipment__feature-text\">All processes, from wafer removal from the cassette, thickness measurement, processing, and data storage, are automated. Efficient production is possible without manpower.<\/p>\n<\/div>\n<div class=\"pcvm-equipment__feature-card\">\n<h3 class=\"pcvm-equipment__feature-title\">Cost Reduction<\/h3>\n<p class=\"pcvm-equipment__feature-text\">Compact design minimizes He gas usage and significantly reduces running costs. This system is also environmentally friendly.<\/p>\n<\/div>\n<div class=\"pcvm-equipment__feature-card\">\n<h3 class=\"pcvm-equipment__feature-title\">Reliable Traceability<\/h3>\n<p class=\"pcvm-equipment__feature-text\">All thickness data before and after processing is stored in the system.<br \/>Quality control is assured.<\/p>\n<\/div>\n<\/div>\n<\/section>\n<section class=\"c-section pcvm-product-\">\n<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Features of Plasma CVM Products<\/span><\/h2>\n<div class=\"pcvm-product-features__grid\">\n<div class=\"pcvm-product-features__item\">\n<h3 class=\"c-title l2\">\u25a0JC100\u3000<br \/>Stand-alone type <br \/>(Standard type for development and small-lot production)<\/h3>\n<ul class=\"pcvm-product-features__list\">\n<li>Stand-alone type<\/li>\n<li>Suitable for customers who wish to independently study Plasma CVM<\/li>\n<li>Load-lock chamber reduces the time required to change samples and enables efficient continuous processing.<\/li>\n<li>Thickness measuring device is included.<\/li>\n<\/ul>\n<\/div>\n<div class=\"pcvm-product-features__item\">\n<h3 class=\"c-title l2\">\u25a0JC2000<br \/>System type <br \/>(Fully Automated type for mass production)<\/h3>\n<ul class=\"pcvm-product-features__list\">\n<li>Equipped with a processing unit and a measuring unit, this Automated system calculates the amount of processing based on the measurement data and performs processing.<\/li>\n<li>System configuration for mass-production processing<\/li>\n<li>Wafer transfer in the system is performed by transfer robot.<\/li>\n<li>High throughput is achieved by using multiple processing chambers (two chambers for JC2000).<\/li>\n<\/ul>\n<\/div>\n<\/div>\n<\/section>\n<section class=\"c-section pcvm-steps\">\n<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Steps up to System Installation<\/span><\/h2>\n<div class=\"pcvm-steps__grid\">\n<div class=\"pcvm-steps__item\">\n<p class=\"pcvm-steps__label\">STEP<\/p>\n<div class=\"pcvm-steps__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-step01.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-steps__title\">Inquiry<\/h3>\n<p class=\"pcvm-steps__text\">Accepts questions regarding Plasma CVM technology, system, etc.<\/p>\n<\/div>\n<div class=\"pcvm-steps__item\">\n<p class=\"pcvm-steps__label\">STEP<\/p>\n<div class=\"pcvm-steps__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-step02.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-steps__title\">Technology introduction<\/h3>\n<p class=\"pcvm-steps__text\">Visit or web conference, depending on your request<\/p>\n<\/div>\n<div class=\"pcvm-steps__item\">\n<p class=\"pcvm-steps__label\">STEP<\/p>\n<div class=\"pcvm-steps__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-step03.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-steps__title\">Sample prototyping and evaluation<\/h3>\n<p class=\"pcvm-steps__text\">Test processing is available at any time<\/p>\n<\/div>\n<div class=\"pcvm-steps__item\">\n<p class=\"pcvm-steps__label\">STEP<\/p>\n<div class=\"pcvm-steps__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-step04.webp\" alt=\"\" \/><\/div>\n<h3 class=\"pcvm-steps__title\">Proposal for rough estimate, detailed system specifications, etc.<\/h3>\n<\/div>\n<\/div>\n<\/section>\n<section class=\"c-section pcvm-composition\">\n<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Plasma CVM System Configuration Example<\/span><\/h2>\n<div class=\"pcvm-composition__image u-text-center c-image -white\"><img src=\"\/assets\/img\/plasma-cvm\/cvm-composition_en.webp\" alt=\"\" \/><\/div>\n<\/section>\n<section class=\"c-section pcvm-specs\">\n<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Plasma CVM system general specifications<\/span><\/h2>\n<div class=\"pcvm-specs__table-wrapper\">\n<p><!-- \n\n\n\n\n\n\n\n\n\n\n\n<tr>\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-label\" rowspan=\"2\">Peripheral <br \/>system<br \/>(Option)<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">Tray stage<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">\uff0d<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">Multi-stage loading of trays up to 4-inch size<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                    <\/tr>\n\n\n\n\n\n\n\n\n\n\n\n\n                    \n\n\n\n\n\n\n\n\n\n\n\n<tr>\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">Transport Robot<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">\uff0d<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">4-axis (X-axis, Y-axis, Z-axis, \u03b8-axis) robot<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                    <\/tr>\n\n\n\n\n\n\n\n\n\n\n\n\n                    \n\n\n\n\n\n\n\n\n\n\n\n<tr>\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-label\" colspan=\"2\">Dimensions<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">W2000 mm \u00d7 D750 mm \u00d7 H1600 mm<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">W2000 mm \u00d7 D3700 mm \u00d7 H2200 mm (2-chamber configuration)<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                    <\/tr>\n\n\n\n\n\n\n\n\n\n\n\n\n                    \n\n\n\n\n\n\n\n\n\n\n\n<tr>\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-label\" colspan=\"2\">Weight<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">Approx. 1000 kg<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">Approx. 2500 kg (2-chamber configuration)<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                    <\/tr>\n\n\n\n\n\n\n\n\n\n\n\n\n                    \n\n\n\n\n\n\n\n\n\n\n\n<tr>\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-label\" rowspan=\"2\">Utility<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">Power source<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">3-phase AC200V, 30 A x 1 system<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">3-phase AC200V 30 A x 2 systems, single-phase AC100V 15 A<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                    <\/tr>\n\n\n\n\n\n\n\n\n\n\n\n\n                    \n\n\n\n\n\n\n\n\n\n\n\n<tr>\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\">Instrumentation Air<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                        \n\n\n\n\n\n\n\n\n\n\n\n<td class=\"pcvm-specs__table-cell\" colspan=\"2\">0.4\uff5e0.6 MPa<\/td>\n\n\n\n\n\n\n\n\n\n\n\n\n                    <\/tr>\n\n\n\n\n\n\n\n\n\n\n\n --><\/p>\n<table class=\"pcvm-specs__table\">\n<thead>\n<tr>\n<th class=\"pcvm-specs__table-header-main\" colspan=\"2\">Plasma Chemical Vaporization Machining<br \/>(Plasma CVM)<\/th>\n<th class=\"pcvm-specs__table-header-sub\">JC100 (Plasma CVM system)<\/th>\n<th class=\"pcvm-specs__table-header-sub\">JC2000 (Plasma CVM automated machining system)<\/th>\n<\/tr>\n<\/thead>\n<tbody>\n<tr>\n<td class=\"pcvm-specs__table-label\" rowspan=\"7\">Basic <br \/>configuration<\/td>\n<td class=\"pcvm-specs__table-cell\">Process chamber<\/td>\n<td class=\"pcvm-specs__table-cell\">1 chamber configuration with plasma electrode<\/td>\n<td class=\"pcvm-specs__table-cell\">2 chamber configuration with plasma electrode<\/td>\n<\/tr>\n<tr>\n<td class=\"pcvm-specs__table-cell\">Load lock chamber<\/td>\n<td class=\"pcvm-specs__table-cell\">1 chamber configuration<\/td>\n<td class=\"pcvm-specs__table-cell\">2-chamber configuration<\/td>\n<\/tr>\n<tr>\n<td class=\"pcvm-specs__table-cell\">Degree of vacuum<\/td>\n<td class=\"pcvm-specs__table-cell\" colspan=\"2\">Achievable vacuum 10 Pa<\/td>\n<\/tr>\n<tr>\n<td class=\"pcvm-specs__table-cell\">Gas type<\/td>\n<td class=\"pcvm-specs__table-cell\" colspan=\"2\">He \/ SF<sub>6<\/sub> for process, N<sub>2<\/sub> for purge<\/td>\n<\/tr>\n<tr>\n<td class=\"pcvm-specs__table-cell\">Plasma power source<\/td>\n<td class=\"pcvm-specs__table-cell\" colspan=\"2\">13.56 MHz \/ Max. 300 W<\/td>\n<\/tr>\n<tr>\n<td class=\"pcvm-specs__table-cell\">Control unit<\/td>\n<td class=\"pcvm-specs__table-cell\" colspan=\"2\">PLC control (partly PC control)<\/td>\n<\/tr>\n<tr>\n<td class=\"pcvm-specs__table-cell\">Thickness measurement unit<\/td>\n<td class=\"pcvm-specs__table-cell\" colspan=\"2\">Spectral interferometry (for wafer thicknesses from 20 to 100 \u00b5m)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<p class=\"pcvm-specs__note\" style=\"text-align: right;\">*Please contact us for wafer size.<\/p>\n<\/section>\n<section class=\"c-section pcvm-needs\">\n<div class=\"needs-flex\">\n<div class=\"pcvm-needs__content\">\n<h2 class=\"pcvm-needs__title\">We propose the optimal system to meet your needs.<\/h2>\n<p class=\"pcvm-needs__text\">Plasma CVM system consists of a process chamber for processing, a load lock chaber, and a thickness measurement unit.<br \/>We can propose optimal system configurations for customers seeking to improve processing capacity and shorten takt time.<br \/>If you are interested in producing high-quality, high-performance wafers efficiently and at low cost, please click the Inquiry button below to tell us about your needs.<\/p>\n<\/div>\n<div class=\"pcvm-needs__image\"><img src=\"\/assets\/img\/plasma-cvm\/needs-item.webp\" alt=\"\" \/><\/div>\n<\/div>\n<p><a class=\"pcvm-contact-button\" href=\"\/english\/contact\/plasma-cvm-contact\/\"> Contact Us <\/a><\/p>\n<\/section>\n<\/div>\n\n\n<div class=\"c-fix-button\">\n    <button class=\"c-fix-button__close\" aria-label=\"Close\">\n      \n        <img loading=\"lazy\" src=\"\/assets\/img\/icon-close01.svg\" alt=\"\" width=\"24\" height=\"24\">\n      \n    <\/button>\n    <div class=\"c-fix-button__inner\">\n      <p class=\"c-fix-button__text\">\n        Contact us for inquiries about Plasma CVM\n      <\/p>\n      <div class=\"c-fix-button__buttons\">\n        <a href=\"\/english\/contact\/plasma-cvm-contact\/\" class=\"c-fix-button__btn -contact\">\n          <span>Contact Us<\/span>\n          \n            \n          \n        <\/a>\n                \n            <\/div>\n        <\/div>\n  <\/div>\n","protected":false},"excerpt":{"rendered":"<p>Semiconductor and Quartz Wafers New Possibilities for Planarization Plasma CVM Plasma CVM (Chemical Vaporizati [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":4710,"menu_order":27,"comment_status":"closed","ping_status":"closed","template":"page-device-lp.php","meta":[],"acf":[],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/4776"}],"collection":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/comments?post=4776"}],"version-history":[{"count":18,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/4776\/revisions"}],"predecessor-version":[{"id":7890,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/4776\/revisions\/7890"}],"up":[{"embeddable":true,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/4710"}],"wp:attachment":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/media?parent=4776"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}