{"id":5228,"date":"2025-10-22T12:21:07","date_gmt":"2025-10-22T03:21:07","guid":{"rendered":"https:\/\/jteccorp.wdkb.jp\/?page_id=5228"},"modified":"2026-03-31T12:00:44","modified_gmt":"2026-03-31T03:00:44","slug":"ecmp","status":"publish","type":"page","link":"https:\/\/www.j-tec.co.jp\/english\/device\/ecmp\/","title":{"rendered":"ECMP\uff08Electro-Chemical Mechanical Polishing\uff09"},"content":{"rendered":"\n<div class=\"page-plasmacvm0313\">\n\t<section class=\"pcvm-mv\">\n\t\t<div class=\"pcvm-mv__bg\"><img src=\"\/assets\/img\/device\/ecmp\/mv.webp\" alt=\"\"><\/div>\n\t\t<div class=\"pcvm-mv__content\">\n\t\t\t<div class=\"pcvm-mv__image\"><img src=\"\/assets\/img\/device\/ecmp\/mv-item.webp\" alt=\"\"><\/div>\n\t\t\t<div class=\"pcvm-mv__text\">\n\t\t\t\t<h1 class=\"pcvm-mv__title\"><span class=\"pcvm-mv__title-main\"><span class=\"pcvm-mv__title-main-text\">High Efficiency, Low Environmental\n\t\t\t\t\t\t\tImpact, and Low Cost<br class=\"sp\">\u2014A New SiC Polishing\n\t\t\t\t\t\t\tTechnology<\/span><\/span> <span class=\"pcvm-mv__title-sub\"> <span class=\"large\">ECMP<\/span> <span class=\"small\">Electro-Chemical\n\t\t\t\t\t\t\tMechanical Polishing<\/span> <\/span><\/h1>\n\t\t\t\t<div class=\"pcvm-mv__description\">\n\t\t\t\t\t<p class=\"pcvm-mv__description-text\">Achieves high material removal\n\t\t\t\t\t\tefficiency by softening the SiC wafer surface!<\/p>\n\t\t\t\t\t<p class=\"pcvm-mv__description-text\">A chemical-free polishing process using\n\t\t\t\t\t\tan ion-conductive composite pad realizes low environmental impact and\n\t\t\t\t\t\tlow cost!<\/p>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"pcvm-mv__info\">\n\t\t\t\t\t<div class=\"pcvm-mv__info-item left\">\n\t\t\t\t\t\t<h3 class=\"pcvm-mv__info-title\">Workpiece<\/h3>\n\t\t\t\t\t\t<p class=\"pcvm-mv__info-text\">SiC<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"pcvm-mv__info-divider\"> <\/div>\n\t\t\t\t\t<div class=\"pcvm-mv__info-item right\">\n\t\t\t\t\t\t<h3 class=\"pcvm-mv__info-title\">Applications<\/h3>\n\t\t\t\t\t\t<ul class=\"pcvm-mv__info-text\">\n\t\t\t\t\t\t\t<li>High-speed SiC wafer polishing (20 \u00b5m\/h)<\/li>\n\t\t\t\t\t\t\t<li>SiC wafer surface finishing (Sa 0.2 nm)<\/li>\n\t\t\t\t\t\t<\/ul>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t<\/section>\n\t<div class=\"l-detail-content\">\n\t\t<section class=\"c-section pcvm-intro\"><a id=\"knowledge\" class=\"u-scroll-point\"><\/a>\n\t\t\t<div class=\"pcvm-intro__content\">\n\t\t\t\t<div class=\"pcvm-intro__text\">\n\t\t\t\t\t<h2 class=\"c-title l2 \">JTEC Corporation&#8217;s ECMP Technology<\/h2>\n\t\t\t\t\t<h3 class=\"pcvm-intro__subtitle\">What is ECMP (Electro-Chemical Mechanical\n\t\t\t\t\t\tPolishing)?<\/h3>\n\t\t\t\t\t<p class=\"text\">SiC wafers, second only to diamond in hardness, are\n\t\t\t\t\t\tdifficult-to-machine materials. JTEC&#8217;s ECMP uses electrochemical\n\t\t\t\t\t\treactions to anodically oxidize the SiC surface and temporarily soften\n\t\t\t\t\t\tit, enabling efficient removal and achieving a high processing rate of\n\t\t\t\t\t\t20 \u00b5m\/h. In addition, by adopting an ion-conductive composite pad\n\t\t\t\t\t\tcontaining a solid electrolyte on the cathode side, the process eliminates\n\t\t\t\t\t\tchemical solutions and reduces environmental impact and cost.\n\t\t\t\t\t<\/p>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"pcvm-intro__image\">\n\t\t\t\t\t<iframe loading=\"lazy\" width=\"560\" height=\"315\" src=\"https:\/\/www.youtube.com\/embed\/s8EJIFHzgkg?si=Rwlyf4NWHS4fXbv-\" frameborder=\"0\"><\/iframe>\n\t\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\t\t<section class=\"c-section pcvm-strength\">\n\t\t\t<h2 class=\"c-title pcvm-section-title\"><span class=\"pcvm-section-title__text\">Strengths of ECMP<\/span><\/h2>\n\t\t\t<div class=\"pcvm-strength__grid\">\n\t\t\t\t<div class=\"pcvm-strength__item\">\n\t\t\t\t\t<div class=\"pcvm-strength__text-box-left\">\n\t\t\t\t\t\t<p class=\"pcvm-strength__label\">POINT<\/p>\n\t\t\t\t\t\t<div class=\"pcvm-strength__icon\"><img src=\"\/assets\/img\/device\/ecmp\/icon-point01.webp\" alt=\"\"><\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"pcvm-strength__text-box-right\">\n\t\t\t\t\t\t<h3 class=\"pcvm-strength__title\">High-Efficiency Polishing<br class=\"sp\">Improves Productivity<\/h3>\n\t\t\t\t\t\t<p class=\"pcvm-strength__text\">Successfully improved SiC wafer\n\t\t\t\t\t\t\tprocessing efficiency by more than 10 times compared to conventional\n\t\t\t\t\t\t\tmethods through an electrochemical reaction.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"pcvm-strength__item\">\n\t\t\t\t\t<div class=\"pcvm-strength__text-box-left\">\n\t\t\t\t\t\t<p class=\"pcvm-strength__label\">POINT<\/p>\n\t\t\t\t\t\t<div class=\"pcvm-strength__icon\"><img src=\"\/assets\/img\/device\/ecmp\/icon-point02.webp\" alt=\"\"><\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"pcvm-strength__text-box-right\">\n\t\t\t\t\t\t<h3 class=\"pcvm-strength__title\">Chemical-Free Process<br class=\"sp\">Reduces Environmental Impact<\/h3>\n\t\t\t\t\t\t<p class=\"pcvm-strength__text\">The ion-conductive composite pad enables\n\t\t\t\t\t\t\ta chemical-free process, significantly reducing environmental impact\n\t\t\t\t\t\t\tand wastewater treatment costs.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"pcvm-strength__item\">\n\t\t\t\t\t<div class=\"pcvm-strength__text-box-left\">\n\t\t\t\t\t\t<p class=\"pcvm-strength__label\">POINT<\/p>\n\t\t\t\t\t\t<div class=\"pcvm-strength__icon\"><img src=\"\/assets\/img\/device\/ecmp\/icon-point03.webp\" alt=\"\"><\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"pcvm-strength__text-box-right\">\n\t\t\t\t\t\t<h3 class=\"pcvm-strength__title\">High-Precision<br class=\"sp\">Surface\n\t\t\t\t\t\t\tFinishing<\/h3>\n\t\t\t\t\t\t<p class=\"pcvm-strength__text\">Mechanical polishing with CeO<sub>2<\/sub>\n\t\t\t\t\t\t\tslurry enables surface finishing of Sa 0.2 nm or less.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"pcvm-strength__item\">\n\t\t\t\t\t<div class=\"pcvm-strength__text-box-left\">\n\t\t\t\t\t\t<p class=\"pcvm-strength__label\">POINT<\/p>\n\t\t\t\t\t\t<div class=\"pcvm-strength__icon\"><img src=\"\/assets\/img\/device\/ecmp\/icon-point04.webp\" alt=\"\"><\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"pcvm-strength__text-box-right\">\n\t\t\t\t\t\t<h3 class=\"pcvm-strength__title\">Reduced Polishing Process<br class=\"sp\">Cost<\/h3>\n\t\t\t\t\t\t<p class=\"pcvm-strength__text\">Higher processing efficiency shortens\n\t\t\t\t\t\t\tlead time, and the chemical-free process lowers running costs.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t\t<p class=\"pcvm-strength__text-bottom\">&#8220;High Processing Efficiency&#8221;<br class=\"sp\">&#8220;Low Environmental Impact&#8221;<br class=\"sp\">&#8220;High Precision&#8221;<br class=\"sp\">at Lower Cost!!\n\t\t\t<\/p>\n\t\t<\/section>\n\t\t<section class=\"c-section pcvm-environment\">\n\t\t\t<div class=\"contact-box\">\n\t\t\t\t<a class=\"pcvm-contact-button\" href=\"\/english\/contact\/ecmp-contact\">Contact Us<\/a>\n\n\t\t\t\t<\/div>\n\t\t<\/section>\n<a id=\"overview\" class=\"u-scroll-point--80\"><\/a>\n\t\t<div class=\"c-section\">\n\t\t\t<div class=\"c-text\">\n\t\t\t\t<h2 class=\"c-title pcvm-section-title\"><span class=\"pcvm-section-title__text u-mt60\">ECMP Overview<\/span><\/h2>\n\t\t\t\t<div class=\"c-image \"><img class=\"overview-image\" src=\"\/assets\/img\/device\/ecmp\/overview-en.webp\" alt=\"\"> <\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\n\t\t<div class=\"c-section\">\n\t\t\t<div class=\"c-text\">\n\t\t\t\t<h2 class=\"c-title pcvm-section-title\"><span class=\"pcvm-section-title__text\">ECMP Principle and Process Flow<\/span>\n\t\t\t\t<\/h2>\n\t\t\t\t<div class=\"c-image \"><img src=\"\/assets\/img\/device\/ecmp\/ECMP_flow-en.svg\" alt=\"ECMP\u52a0\u5de5\u30d5\u30ed\u30fc\"><\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\n\t\t<div class=\"c-section\">\n\t\t\t<div>\n\t\t\t\t<h2 class=\"c-title pcvm-section-title\"><span class=\"pcvm-section-title__text\">ECMP Processing Examples<\/span><\/h2>\n\t\t\t\t<div class=\"processing-con \">\n\t\t\t\t\t<div class=\"item\">\n\t\t\t\t\t\t<div class=\"c-image\">\n\t\t\t\t\t\t\t<img src=\"\/assets\/img\/device\/ecmp\/processing01-en.webp\" alt=\"\">\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<div class=\"c-text\">\n\t\t\t\t\t\t\t<p class=\"u-mt10 u-fw-bold\">Before ECMP Sa: 26.4 nm<\/p>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"item\">\n\t\t\t\t\t\t<div class=\"c-image\">\n\t\t\t\t\t\t\t<img src=\"\/assets\/img\/device\/ecmp\/processing02-en.webp\" alt=\"\">\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<div class=\"c-text\">\n\t\t\t\t\t\t\t<p class=\"u-mt10 u-fw-bold\">After ECMP <mark>Sa: 0.38<\/mark> nm<\/p>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"item\">\n\t\t\t\t\t\t<div class=\"c-image\">\n\t\t\t\t\t\t\t<img src=\"\/assets\/img\/device\/ecmp\/processing03--en.webp\" alt=\"\">\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<div class=\"c-text\">\n\t\t\t\t\t\t\t<p class=\"u-mt10 u-fw-bold\">Polishing Rate: <mark>20 \u03bcm\/h<\/mark>\n\t\t\t\t\t\t\t\t<\/p>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\n\t\t<div class=\"c-section comparison\">\n\t\t\t<div class=\"c-text\">\n\t\t\t\t<h2 class=\"c-title pcvm-section-title\"><span class=\"pcvm-section-title__text\">Comparison with Conventional Polishing\n\t\t\t\t\t\tMethods<br class=\"sp\">and Their Advantages<\/span><\/h2>\n\t\t\t\t<div class=\"comparison-board\">\n\t\t\t\t\t<div class=\"comparison-board__cards\">\n\t\t\t\t\t\t<div class=\"comparison-column\">\n\t\t\t\t\t\t\t<article class=\"comparison-card -grinding\">\n\t\t\t\t\t\t\t\t<h3 class=\"comparison-card__heading\">Grinding<\/h3>\n\t\t\t\t\t\t\t\t<ul class=\"comparison-card__list\">\n\t\t\t\t\t\t\t\t\t<li><span>Removal Rate<\/span><span>High (60-240 \u00b5m\/h)<\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Slurry<\/span><span>None<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Wastewater Load<\/span><span>Low<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Surface Roughness<\/span><span>Sa: 0.5-20 nm<\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Subsurface Damage Layer<\/span><span>Remains\n\t\t\t\t\t\t\t\t\t\t\t(~several \u00b5m)<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Initial Cost<\/span><span>Low<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Running Cost<\/span><span> Medium\n\t\t\t\t\t\t\t\t\t\t\t(abrasives\/lapping plate maintenance)<\/span><\/li>\n\t\t\t\t\t\t\t\t<\/ul>\n\t\t\t\t\t\t\t<\/article>\n\t\t\t\t\t\t\t<div class=\"comparison-flow__item\">\n\t\t\t\t\t\t\t\t<p class=\"comparison-flow__label\">Applicable SiC Wafer<br class=\"\"> Process Stage<\/p>\n\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t\t<p class=\"comparison-flow__stage\">Rough Processing \/ Planarization\n\t\t\t\t\t\t\t<\/p>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<div class=\"comparison-column\">\n\t\t\t\t\t\t\t<article class=\"comparison-card -ecmp\">\n\t\t\t\t\t\t\t\t<h3 class=\"comparison-card__heading\">JTEC ECMP (Electro-Chemical\n\t\t\t\t\t\t\t\t\tMechanical Polishing)<\/h3>\n\t\t\t\t\t\t\t\t<ul class=\"comparison-card__list\">\n\t\t\t\t\t\t\t\t\t<li><span>Removal Rate<\/span><span>Medium to High (~20\n\t\t\t\t\t\t\t\t\t\t\t\u00b5m\/h)<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Slurry<\/span><span>CeO2 + DIW (deionized water)\n\t\t\t\t\t\t\t\t\t\t\tonly<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Wastewater Load<\/span><span>Low<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Surface Roughness<\/span><span>Sa: 0.1-0.2\n\t\t\t\t\t\t\t\t\t\t\tnm<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Subsurface Damage Layer<\/span><span>Minimal (~5\n\t\t\t\t\t\t\t\t\t\t\tnm)<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Initial Cost<\/span><span>Medium<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Running Cost<\/span><span> Low to Medium\n\t\t\t\t\t\t\t\t\t\t\t(high-efficiency processing, no chemicals)<\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t\t\t<\/ul>\n\t\t\t\t\t\t\t<\/article>\n\t\t\t\t\t\t\t<div class=\"comparison-flow__item\">\n\t\t\t\t\t\t\t\t<p class=\"comparison-flow__label\">Applicable SiC Wafer<br class=\"\"> Process Stage<\/p>\n\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t\t<p class=\"comparison-flow__stage\">Semi-Finishing to Finishing<\/p>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<div class=\"comparison-column\">\n\t\t\t\t\t\t\t<article class=\"comparison-card -cmp\">\n\t\t\t\t\t\t\t\t<h3 class=\"comparison-card__heading\">CMP (Chemical Mechanical\n\t\t\t\t\t\t\t\t\tPolishing)<\/h3>\n\t\t\t\t\t\t\t\t<ul class=\"comparison-card__list\">\n\t\t\t\t\t\t\t\t\t<li><span>Removal Rate<\/span><span>Low<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Slurry<\/span><span>Abrasives\n\t\t\t\t\t\t\t\t\t\t\t+ chemicals such as strong oxidizers and pH\n\t\t\t\t\t\t\t\t\t\t\tadjusters<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Wastewater Load<\/span><span>High<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Surface Roughness<\/span><span>Sa: 0.1 nm or\n\t\t\t\t\t\t\t\t\t\t\tless<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Subsurface Damage Layer<\/span><span>Almost\n\t\t\t\t\t\t\t\t\t\t\tnone<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Initial Cost<\/span><span>High (requires additional\n\t\t\t\t\t\t\t\t\t\t\tsystems for cleaning\/waste treatment)<\/span><\/li>\n\t\t\t\t\t\t\t\t\t<li><span>Running Cost<\/span><span> High (slurry consumption\n\t\t\t\t\t\t\t\t\t\t\tand wastewater treatment)<\/span><\/li>\n\t\t\t\t\t\t\t\t<\/ul>\n\t\t\t\t\t\t\t<\/article>\n\t\t\t\t\t\t\t<div class=\"comparison-flow__item\">\n\t\t\t\t\t\t\t\t<p class=\"comparison-flow__label\">Applicable SiC Wafer<br class=\"\"> Process Stage<\/p>\n\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t\t<p class=\"comparison-flow__stage\">Final Finishing<\/p>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"comparison-message\">\n\t\t\t\t\t\t<p class=\"comparison-message__title\">JTEC ECMP: A Next-Generation SiC\n\t\t\t\t\t\t\tPolishing Technology that Compromises on None of Quality,\n\t\t\t\t\t\t\tEfficiency, and Cost<\/p>\n\t\t\t\t\t\t<p>1) Throughput: Solves the CMP challenge of efficiency by achieving a\n\t\t\t\t\t\t\tprocessing speed of up to 20 \u03bcm\/h while maintaining nanometer-level\n\t\t\t\t\t\t\tflatness.<\/p>\n\t\t\t\t\t\t<p>2) Damage-Free: By combining chemistry and mechanics to minimize the\n\t\t\t\t\t\t\taltered layer, the processed altered layer can be suppressed to a\n\t\t\t\t\t\t\tdepth of 5 nm or less, achieving surface roughness close to CMP.<\/p>\n\t\t\t\t\t\t<p>3) Eco &amp; Econ: No expensive chemicals or strong oxidizers are\n\t\t\t\t\t\t\trequired. Processing is possible with a DIW (deionized water)-based\n\t\t\t\t\t\t\tslurry, balancing lower environmental impact and cost reduction.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\n\t\t<section class=\"c-section pcvm-steps\">\n\t\t\t<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">Steps to\n\t\t\t\t\tImplementing ECMP<\/span><\/h2>\n\t\t\t<div class=\"pcvm-steps__grid\">\n\t\t\t\t<div class=\"pcvm-steps__item\">\n\t\t\t\t\t<p class=\"pcvm-steps__label\">STEP 1<\/p>\n\t\t\t\t\t<div class=\"pcvm-steps__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-step01.webp\" alt=\"\"><\/div>\n\t\t\t\t\t<h3 class=\"pcvm-steps__title\">Inquiry<\/h3>\n\t\t\t\t\t<p class=\"pcvm-steps__text\">Consult with us on technology and systems.<\/p>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"pcvm-steps__item\">\n\t\t\t\t\t<p class=\"pcvm-steps__label\">STEP 2<\/p>\n\t\t\t\t\t<div class=\"pcvm-steps__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-step02.webp\" alt=\"\"><\/div>\n\t\t\t\t\t<h3 class=\"pcvm-steps__title\">Technology Introduction<\/h3>\n\t\t\t\t\t<p class=\"pcvm-steps__text\">In-person or web meeting based on your needs.\n\t\t\t\t\t<\/p>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"pcvm-steps__item\">\n\t\t\t\t\t<p class=\"pcvm-steps__label\">STEP 3<\/p>\n\t\t\t\t\t<div class=\"pcvm-steps__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-step03.webp\" alt=\"\"><\/div>\n\t\t\t\t\t<h3 class=\"pcvm-steps__title\">Sample Trial &amp; Evaluation<\/h3>\n\t\t\t\t\t<p class=\"pcvm-steps__text\">Test processing is available at any time.<\/p>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"pcvm-steps__item\">\n\t\t\t\t\t<p class=\"pcvm-steps__label\">STEP 4<\/p>\n\t\t\t\t\t<div class=\"pcvm-steps__icon\"><img src=\"\/assets\/img\/plasma-cvm\/icon-step04.webp\" alt=\"\"><\/div>\n\t\t\t\t\t<h3 class=\"pcvm-steps__title\">Proposal for Cost Estimate and System\n\t\t\t\t\t\tSpecifications<\/h3>\n\t\t\t\t\t<p class=\"pcvm-steps__text\">Proposal based on needs and test polishing\n\t\t\t\t\t\tresults.<\/p>\n\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/section>\n\n\t\t<div class=\"c-section sic\">\n\t\t\t<div class=\"c-text\">\n\t\t\t\t<h2 class=\"c-title pcvm-section-title\"><span class=\"pcvm-section-title__text\">Why Is Polishing of SiC (Silicon\n\t\t\t\t\t\tCarbide)<br class=\"sp\">Necessary?<\/span><\/h2>\n\t\t\t\t<div class=\"sic-content\">\n\t\t\t\t\t<div class=\"sic-content__block\">\n\t\t\t\t\t\t<h3 class=\"sic-content__heading -light\">What Is SiC?<\/h3>\n\t\t\t\t\t\t<p class=\"sic-content__text\">SiC (silicon carbide) is a material with\n\t\t\t\t\t\t\thigh hardness and stability, second only to diamond. Its importance\n\t\t\t\t\t\t\tis increasing in power semiconductors for electric vehicles and\n\t\t\t\t\t\t\tindustrial robots, as well as inverters for solar power generation,\n\t\t\t\t\t\t\tmaking it an essential material for achieving carbon neutrality.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"sic-content__block\">\n\t\t\t\t\t\t<h3 class=\"sic-content__heading -light\">Challenges in Processing SiC\n\t\t\t\t\t\t\tWafers<\/h3>\n\t\t\t\t\t\t<p class=\"sic-content__text\">SiC is extremely hard, so mechanical\n\t\t\t\t\t\t\tpolishing and cutting cannot remove material efficiently, resulting\n\t\t\t\t\t\t\tin longer processing time and increased tool wear. Although SiC has\n\t\t\t\t\t\t\thigh thermal diffusivity, localized heat concentration can still\n\t\t\t\t\t\t\tcause surface defects, making it a difficult-to-machine material\n\t\t\t\t\t\t\tthat requires advanced control for high-quality processing.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"sic-content__block\">\n\t\t\t\t\t\t<h3 class=\"sic-content__heading -light\">Compatibility of ECMP with SiC\n\t\t\t\t\t\t<\/h3>\n\t\t\t\t\t\t<p class=\"sic-content__text\">JTEC&#8217;s ECMP (Electro-Chemical Mechanical\n\t\t\t\t\t\t\tPolishing) is highly effective for SiC&#8217;s difficult machinability.\n\t\t\t\t\t\t\tECMP uses electrochemical reactions to anodically oxidize the SiC\n\t\t\t\t\t\t\tsurface and temporarily soften the hard surface layer, enabling\n\t\t\t\t\t\t\tefficient material removal. This realizes both high processing\n\t\t\t\t\t\t\tefficiency and uniform finishing, which were difficult with\n\t\t\t\t\t\t\tconventional mechanical polishing.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"sic-content__block\">\n\t\t\t\t\t\t<h3 class=\"sic-content__heading -light\">Applications of SiC Materials\n\t\t\t\t\t\t<\/h3>\n\t\t\t\t\t\t<p class=\"sic-content__text\">SiC offers high heat resistance, high\n\t\t\t\t\t\t\tbreakdown voltage, and high thermal conductivity, and its\n\t\t\t\t\t\t\tapplications are expanding in advanced fields. A representative\n\t\t\t\t\t\t\texample is power semiconductors for electric vehicles and industrial\n\t\t\t\t\t\t\trobots, which greatly contribute to higher efficiency and energy\n\t\t\t\t\t\t\tsavings. Its use is also expanding to solar inverter systems,\n\t\t\t\t\t\t\thigh-frequency communication devices, and high-temperature aerospace\n\t\t\t\t\t\t\tcomponents, increasing its importance as a core material supporting\n\t\t\t\t\t\t\tnext-generation energy infrastructure.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t<div class=\"sic-content__block\">\n\t\t\t\t\t\t<h3 class=\"sic-content__heading -light\">Future Potential of ECMP<\/h3>\n\t\t\t\t\t\t<p class=\"sic-content__text\">As demand for SiC continues to grow,\n\t\t\t\t\t\t\ttechnologies that overcome its machining difficulty and deliver both\n\t\t\t\t\t\t\thigh quality and high efficiency are becoming increasingly\n\t\t\t\t\t\t\timportant. JTEC&#8217;s ECMP achieves high processing efficiency and a\n\t\t\t\t\t\t\tuniform finish while reducing environmental impact. As the SiC\n\t\t\t\t\t\t\tdevice market expands, ECMP adoption is expected to accelerate and\n\t\t\t\t\t\t\tspread across a wide range of manufacturing processes.<\/p>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\n\t\t<section class=\"c-section pcvm-environment\">\n\t\t\t<div class=\"needs-bg\">\n\t\t\t\t<h2 class=\"pcvm-section-title\">\n\t\t\t\t\t<span class=\"pcvm-section-title__text\">We Propose the Optimal System for\n\t\t\t\t\t\tYour Needs<\/span>\n\t\t\t\t<\/h2>\n\t\t\t\t<p class=\"pcvm-environment__contact-text\">For inquiries or detailed\n\t\t\t\t\tinformation,<br class=\"sp\">please feel free to contact<br class=\"sp\">JTEC\n\t\t\t\t\tCorporation.<\/p>\n\n\t\t\t\t<div class=\"contact-box\"><a class=\"pcvm-contact-button\" href=\"\/english\/contact\/ecmp-contact\">Contact Us<\/a>\n\n\t\t\t\t<\/div>\n\n\t\t\t<\/div>\n\t\t<\/section>\n\n\t\t<section class=\"c-section pcvm-composition\">\n\t\t\t<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">ECMP System\n\t\t\t\t\tConfiguration<\/span><\/h2>\n\t\t\t<div class=\"pcvm-composition__image u-text-center c-image\"><img src=\"\/assets\/img\/device\/ecmp\/cvm-composition-en.webp\" alt=\"\"><\/div>\n\t\t<\/section>\n\t\t<section class=\"c-section pcvm-specs\">\n\t\t\t<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">ECMP General\n\t\t\t\t\tSpecifications<\/span><\/h2>\n\t\t\t<div class=\"pcvm-specs__table-wrapper\">\n\t\t\t\t<table class=\"pcvm-specs__table\">\n\t\t\t\t\t<thead>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<th class=\"pcvm-specs__table-header-main\" colspan=\"2\">Model<\/th>\n\t\t\t\t\t\t\t<th class=\"pcvm-specs__table-header-sub\">EP100<\/th>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t<\/thead>\n\t\t\t\t\t<tbody>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\" rowspan=\"6\">General\n\t\t\t\t\t\t\t\tSpecifications<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Wafer Size<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">6-8 inch<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Applicable Wafer Material<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">SiC<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Number of Platens<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">1<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Polishing Heads<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">1<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Machine Dimensions<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">W1200 mm\u3000\u00d7 D1210 mm\u3000\u00d7 H2400 mm\n\t\t\t\t\t\t\t<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Machine Weight<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">\u7d041800 kg<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\" rowspan=\"4\">Polishing Unit\n\t\t\t\t\t\t\t\tSpecifications<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Applied Load Range<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">10-150 kgf<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Polishing Head Rotation Speed\n\t\t\t\t\t\t\t<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">10-90 rpm<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Platen Rotation Speed<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">10-150 rpm<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Oscillation Stroke<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">\u00b155 mm\uff086&#8243;\uff09\uff0f \u00b130 mm\uff088&#8243;\uff09<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\" rowspan=\"3\">Utilities<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Power Supply<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">3-phase AC200 V\u30fb60 A<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Instrumentation Air<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">0.4-0.6 MPa\uff08C.D.A\uff09<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t\t<tr>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-label\">Waste Liquid<\/td>\n\t\t\t\t\t\t\t<td class=\"pcvm-specs__table-cell\">Naturally discharged to the\n\t\t\t\t\t\t\t\toutside through a drain hose from the rear of the systems.<\/td>\n\t\t\t\t\t\t<\/tr>\n\t\t\t\t\t<\/tbody>\n\t\t\t\t<\/table>\n\t\t\t<\/div>\n\t\t\t<p class=\"pcvm-specs__note\">*Please contact us regarding wafer size.<\/p>\n\t\t<\/section>\n\n\t<\/div>\n\t<p> <\/p>\n\n\t<section class=\"c-section pcvm-composition reference\">\n\t\t<h2 class=\"pcvm-section-title\"><span class=\"pcvm-section-title__text\">References<\/span>\n\t\t<\/h2>\n\t\t<div class=\"pcvm-reference-list\">\n\t\t\t<div class=\"pcvm-reference-item\">\n\t\t\t\t<p>C. N. S. B. C. Zulkifle, K. Hayama, and J. Murata, &#8220;High-efficiency\n\t\t\t\t\twafer-scale finishing of 4H-SiC (0001) surface using chemical-free\n\t\t\t\t\telectrochemical mechanical method with a solid polymer electrolyte,&#8221;\n\t\t\t\t\t<em>Diamond Relat. Mater.<\/em>, vol. 120, p. 108700, Dec. 2021.\n\t\t\t\t<\/p>\n\t\t\t\t<p><a class=\"c-icon -blank\" href=\"https:\/\/doi.org\/10.1016\/j.diamond.2021.108700\" target=\"_blank\" rel=\"noopener noreferrer\">https:\/\/doi.org\/10.1016\/j.diamond.2021.108700<\/a>\n\t\t\t\t<\/p>\n\t\t\t<\/div>\n\t\t\t<div class=\"pcvm-reference-item\">\n\t\t\t\t<p>J. Murata, K. Hayama, and M. Takizawa, &#8220;Environment-friendly electrochemical\n\t\t\t\t\tmechanical polishing using solid polymer electrolyte\/CeO2 composite pad for\n\t\t\t\t\thighly efficient finishing of 4H-SiC (0001) surface,&#8221; <em>Appl. Surf.\n\t\t\t\t\t\tSci.<\/em>, vol. 625, p. 157190, Jul. 2023.<\/p>\n\t\t\t\t<p><a class=\"c-icon -blank\" href=\"https:\/\/doi.org\/10.1016\/j.apsusc.2023.157190\" target=\"_blank\" rel=\"noopener noreferrer\">https:\/\/doi.org\/10.1016\/j.apsusc.2023.157190<\/a>\n\t\t\t\t<\/p>\n\t\t\t<\/div>\n\t\t\t<div class=\"pcvm-reference-item\">\n\t\t\t\t<p>N. Inada, M. Takizawa, M. Adachi, and J. Murata, &#8220;Sustainable Electrochemical\n\t\t\t\t\tMechanical Polishing (ECMP) for 4H-SiC wafer using chemical-free polishing\n\t\t\t\t\tslurry with hydrocarbon-based solid polymer electrolyte,&#8221; <em>Appl. Surf.\n\t\t\t\t\t\tSci.<\/em>, vol. 664, p. 160241, Aug. 2024.<\/p>\n\t\t\t\t<p><a class=\"c-icon -blank\" href=\"https:\/\/doi.org\/10.1016\/j.apsusc.2024.160241\" target=\"_blank\" rel=\"noopener noreferrer\">https:\/\/doi.org\/10.1016\/j.apsusc.2024.160241<\/a>\n\t\t\t\t<\/p>\n\t\t\t<\/div>\n\t\t<\/div>\n\t<\/section>\n<\/div>\n\n\n\n<div class=\"c-fix-button\">\n    <button class=\"c-fix-button__close\" aria-label=\"Close\">\n      \n        <img loading=\"lazy\" src=\"\/assets\/img\/icon-close01.svg\" alt=\"\" width=\"24\" height=\"24\">\n      \n    <\/button>\n    <div class=\"c-fix-button__inner\">\n      <p class=\"c-fix-button__text\">\n        For inquiries about ECMP, please contact us here\n      <\/p>\n      <div class=\"c-fix-button__buttons\">\n        <a href=\"\/english\/contact\/ecmp-contact\/\" class=\"c-fix-button__btn -contact\">\n          <span>Contact Us<\/span>\n          \n            \n          \n        <\/a>\n      \n      <\/div>\n    <\/div>\n  <\/div>\n","protected":false},"excerpt":{"rendered":"<p>High Efficiency, Low Environmental Impact, and Low Cost\u2014A New SiC Polishing Technology ECMP Electro-Chemical M [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":4710,"menu_order":36,"comment_status":"closed","ping_status":"closed","template":"page-device-detail.php","meta":[],"acf":[],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/5228"}],"collection":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/comments?post=5228"}],"version-history":[{"count":33,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/5228\/revisions"}],"predecessor-version":[{"id":7752,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/5228\/revisions\/7752"}],"up":[{"embeddable":true,"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/pages\/4710"}],"wp:attachment":[{"href":"https:\/\/www.j-tec.co.jp\/english\/wp-json\/wp\/v2\/media?parent=5228"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}