Advancing into the Semiconductor
Industry with JTEC CORPORATION’s
Proprietary Technology

Plasma CVM is a dry etching technique that utilizes plasma-activated reactive gases to process surfaces with atomic-level control. By combining this method with numerical control, it is possible to suppress thickness variation across an entire quartz substrate to 10 nm or less.

PAP (Plasma-Assisted Polishing) is a proprietary polishing technology that employs plasma-induced surface modification of the workpiece, specifically designed for hard materials such as DIAMOND. Compared to conventional mechanical polishing, it achieves a higher polishing rate while producing surfaces with minimal damage and defects.

ECMP (Electro-chemical Mechanical Polishing) is a process developed as an alternative to lapping and CMP, specifically for polishing SiC. By utilizing Ion-Conductive Polymer Pads, this method eliminates the need for chemical solutions, providing a safe and environmentally friendly process. For DIAMOND Substrates, a polishing rate of 6 µm/hr has been achieved.

CARE (Catalyst Referred Etching) is a technology that achieves atomic-level surface finishing using Only Pure Water with Metal Catalyst action, delivering a surface roughness of 0.1 nm RMS or less. When applied as the final step after CMP, CARE enhances the performance and reliability of semiconductor wafers. In addition, this process is also used for finishing the reflective surfaces of our high-precision X-ray mirrors.