- Device Development
ECMP
Electro-Chemical Mechanical Polishing
ECMP (Electro-chemical Mechanical Polishing) processing is a method focused on SiC polishing and was developed as an alternative process to lapping/CMP. It uses anodic oxidation for polishing , but does not require an electrolytic solution. By employing ion-conductive polymer pads, it is a safe and environmentally friendly process that avoids the use of chemicals. 6 μm/Hr processing rate has been obtained.
- Workpiece
- SiC
- Application Examples
- High-speed polishing of SiC wafers (6µm/Hr or more)
- Surface finishing of SiC wafers (Sa 0.5nm or less)
Processing Overview Diagram
Electro-Chemical Mechanical Polishing Technology
Processing Flow
Utilizing the anodic oxidation (softening) phenomenon on the work surface
No chemical solution required by using an ion-conductive pad
■Features
・Low environmental load processing without chemical solutions by using ion-conductive pads
・High-speed, precision polishing utilizing the anodic oxidation (softening) phenomenon on the work surface by solid electrolyte
・As a polishing technology alternative to CMP, achieving “clean” and “high-efficiency polishing”
■Typical Application Examples
・High-speed polishing of SiC wafers
・Surface finishing of SiC wafers
Processing Case: 4H-N SiC (Size: 4 inch, Processing Surface: Si face)
Before ECMP Sa: 26.4 nm
After ECMP Sa: 0.38 nm
Polishing Rate :10.5 μm/Hr 以上
Ideal for high-efficiency polishing of SiC as an alternative to CMP
ECMP is proprietary technology of Ritsumeikan University.