

Using plasma to activate the workpiece and seal surfaces, it enables clean, efficient polishing without slurry or mechanical processing, and produces no damaged layer.
Diamond,
Oxide Ceramics
PAP utilizes plasma to activate and polish surfaces, specifically designed for polishing hard materials such as diamond. Compared to conventional mechanical polishing using diamond abrasives, it offers higher efficiency while preventing the formation of processing-induced damage layers. This technology is gaining significant attention for its potential in the polishing process of diamond substrates, which are expected to play a crucial role in next-generation power devices.
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Achieves both high processing speed and precision at an advanced level
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Preserves crystal structure integrity and prevents surface damage, enhancing product reliability and performance
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A fully dry process that does not use chemicals or polishing slurry, contributing to reduced environmental impact.
The PAP (Plasma Assisted Polishing) Equipment is designed to achieve high-efficiency and damage-free polishing by utilizing plasma-activated particles (ions and radicals) that chemically bond with the atoms on the surface of the workpiece, weakening the interatomic bonds. This enables high-precision processing of ultra-hard materials such as diamond, which has been challenging with conventional mechanical polishing methods.
Applicable to hard materials and new materials beyond diamond, providing equipment for a wide range of phases from research and development to mass production.
Reduced Polishing Time for Improved Efficiency
By adopting a simple design, equipment costs are reduced, and slurry-free operation lowers running costs.
Devices made from hard materials such as diamond and silicon carbide (SiC) exhibit excellent thermal efficiency due to their high thermal conductivity and low thermal expansion coefficient, allowing them to operate at high temperatures without losing efficiency. As a result, heat dissipation design becomes simpler, and durability and reliability at high temperatures are enhanced. This technology is expected to be increasingly utilized in various fields, including semiconductors, electronics, aerospace, medical devices, renewable energy, laser technology, and transportation sectors such as automobiles and trains.
Application to Power Devices: Contributing to the performance enhancement of next-generation power devices by applying to high-quality SiC wafers and diamond substrates.
Application to Optical Components: Suitable for manufacturing high-precision diamond lenses and windows.
Application to Heat Sinks: Diamond substrate heat sinks are attracting attention as highly effective cooling solutions due to their excellent thermal conductivity and high durability.
Application to Mechanical Uses: Diamond, with its excellent wear resistance and anti-adhesion properties, is gaining attention for use in tools, molds, and sliding components. Additionally, improved machining precision and defect reduction are expected to lower costs and extend product lifespan
Diamond substrates contribute to improving the efficiency and reliability of power devices due to their high thermal conductivity and pressure resistance. Additionally, the exceptional properties of diamond enable stable performance even in harsh operating environments. Despite their advantages, diamond substrates face challenges for practical application, including cost, machining difficulty, bonding technology, and thermal expansion issues. However, in terms of machining difficulty, PAP (Plasma Assisted Polishing) has achieved clean, high-efficiency polishing without generating a processing-induced altered layer.
Heat sinks made of aluminum or copper substrates have been commonly used. However, in electronic devices with high thermal loads, as well as in specialized applications, cooling systems tend to become complex and large-scale. On the other hand, using diamond heat sinks provides a simple and efficient solution. Despite its superior properties, the use of diamond has been limited due to its high cost and machining difficulties. However, PAP (Plasma Assisted Polishing) has enabled clean, high-efficiency polishing without inducing processing-induced damage layers. This technology expands the potential for the practical application of diamond substrate heat sinks.
The reason why even hard materials can be processed is that the plasma on the processing table chemically bonds strongly with the atoms on the surface of the workpiece (such as a diamond substrate), thereby breaking the bonds between the surface and the internal structure of the workpiece.
Since this is a dry process that does not use diamond slurry or polishing plates typically used for hard materials, it creates a smooth surface without defects or processing-induced damage.
By applying PAP (Plasma Assisted Polishing), the surface roughness (Sa value) of diamond substrates is greatly improved from 10.7 nm to 0.23 nm.

Surface roughness after processing: 0.15 nm RMS.

Confirmed no disruption in crystallinity or transition to a graphite structure, achieving damage-free polishing.
| Issues | Advantages of PAP (Plasma Assisted Polishing) | |
|---|---|---|
| Comparison with Mechanical Polishing MethodsThe mechanical polishing method is a polishing method that physically removes material using hard abrasives such as diamond grit. |
[Low Polishing Efficiency]Polishing hard materials takes time, resulting in low productivity.
[Surface Damage Occurrence]During polishing, small surface damages and defects are likely to occur.
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[High-Efficiency Polishing]By applying surface modification through plasma, high-speed polishing of hard materials is possible.
[Damage-Free Polishing]Minimizes surface damage, improving the quality of the product.
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Comparison with Chemical Mechanical Polishing (CMP) Method CMP is a method that combines chemical etching and mechanical polishing, mainly used for planarizing semiconductor wafers. |
[Environmental Impact]Since a large amount of chemicals is used, concerns arise regarding wastewater treatment and environmental impact.
[Difficulty in Application to Hard Materials]The effectiveness is limited for ultra-hard materials such as diamond.
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[Environmentally Friendly]Only plasma is used, with no chemical usage at all.
[Specialized for Hard Materials]High-precision polishing is possible for materials such as diamond, which are difficult to process with CMP.
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Comparison with Ion Beam Polishing Method The ion beam polishing method is a polishing method that removes material by irradiating the material surface with an ion beam. |
[High Equipment Cost]Advanced vacuum equipment and ion sources are required, leading to high initial investment.
[Slow Polishing Speed]The removal rate is low, making it unsuitable for large-area polishing or mass production.
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[Cost-Effective Equipment]PAP equipment is more cost-effective compared to ion beam equipment.
[High Polishing Speed]By combining plasma and mechanical polishing, efficient polishing is possible.
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Comparison with Laser Processing Method The laser processing method is a processing method that uses a high-power laser to evaporate or sublimate materials. |
[Thermal Effects]High temperatures may cause thermal deformation or internal stresses in the material.
[Surface Quality Limitations]Microcracks or re-solidification layers may occur.
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[Low Thermal Impact]Plasma surface modification is performed at low temperatures, minimizing material degradation due to heat.
[High-Quality Surface]Damage-free polishing significantly improves surface quality.
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STEP
Accepting inquiries about PAP (Plasma Assisted Polishing) technology and equipment.
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Visit or Web meeting based on your preference.
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Test polishing and evaluation cycles are conducted as needed.
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Proposal based on needs and test polishing results.
If you have any inquiries or need more detailed information, please feel free to contact JTEC CORPORATION.
Contact Us
| PAP(Plasma Assisted Polishing Method) | PA1300 | |
|---|---|---|
| Basic Specifications | Grinding plate | Quartz plate / Si-plate (approx. 8 inch) |
| Workpiece Size | Flat: Maximum diameter 4 inches, Thickness: 0.4 mm – 20 mm | |
| Plasma Power Supply | Maximum 1 kW | |
| Process Gas | Ar、 O2 | |
| Vacuum Level (During Processing) | Ultimate vacuum: 20 Pa | |
※For workpiece size, please consult us.