Device DevelopmentDevice Development
Advanced surface processing technology on semiconductor material
Plasma CVM
![Plasma Chemical Vaporization Machining](https://www.j-tec.co.jp/wp-content/uploads/2023/03/PCVM.jpg)
Vapor-phase chemical etching using high-density plasma realizes highly efficient yet distortion -free processing.
CARE
![CAtalyst Referred Etching](https://www.j-tec.co.jp/wp-content/uploads/2023/03/CARE.jpg)
A pad with catalytic functionality flattens materials on an atomic scale in a purely chemical manner.
PAP
![Plasma Assisted Polishing](https://www.j-tec.co.jp/wp-content/uploads/2023/03/pap.jpg)
PAP accomplished in polishing a 20㎟ world- size class mosaic single-crystal diamond high-efficiently and damage-free.
Plasma Chemical Vaporization Machining
PCVM
JC-1000 System
![大気圧プラズマ加工装置](https://www.j-tec.co.jp/wp-content/uploads/2023/03/PCVMsouchi.png)
Transport Unit
Machining
Processing Principle
![](https://www.j-tec.co.jp/wp-content/uploads/2023/03/PCVM_structure_en.png)
Highly Efficient and Damage-Free Polishing Method By vapor-phase chemical etching using high-density plasma
Quartz wafer
Pre-processed Quartz wafer:
Commercially available 4inch (100mm) thickness 60μm
Measurement area:
Area within a circle of 100mm diameter
Before NC-PCVM
![](https://www.j-tec.co.jp/english/wp-content/uploads/sites/3/2024/07/img-plasma-cvm7.png)
TTV: 102nm
After NC-PCVM
![](https://www.j-tec.co.jp/english/wp-content/uploads/sites/3/2024/07/Quartz_3D_after.png)
TTV: 18nm
Ultra-thin SOI Film
Pre-processed SOI wafer:
Commercially available 8inch (200mm) thin film SOI wafer
(SOI layer: 100nm, embedded oxide film layer: 200nm)
Measurement point:
Area within a circle of 190mm diameter, 5.5mm grid
Before NC-PCVM
![](https://www.j-tec.co.jp/english/wp-content/uploads/sites/3/2024/07/soi_beforePCVM_01.jpg)
Coating Thickness: 97.5 nm
TTV: 9.4 nm
After NC-PCVM
![](https://www.j-tec.co.jp/english/wp-content/uploads/sites/3/2024/07/soi_AfterPCVM_02.jpg)
Coating Thickness: 7.5 nm
TTV: 3 nm
Ultra-thin wafer and highly uniform thickness is realized
CAtalyst Referred Etching
CARE
Pad with catalytic function as a reference surface
Atomically smooth surface planarized in a chemical manner
CA-1000 Equipment
![触媒表面基準エッチング装置](https://www.j-tec.co.jp/wp-content/uploads/2023/03/CAREDevice.jpg)
Processing Flow
![Processing Flow](https://www.j-tec.co.jp/english/wp-content/uploads/sites/3/2023/08/CARE_flow_en.png)
Selective etching at the topmost areas in contact with the catalyst surface.Improving surface roughness without changing the thickness uniformity
Examples of CARE-processed surfaces
![ステップテラス](https://www.j-tec.co.jp/wp-content/uploads/2023/03/stepterrace_2.jpg)
![ステップテラス](https://www.j-tec.co.jp/wp-content/uploads/2023/03/stepterrace_3.jpg)
Atomically smooth and damage-free surfaces
High potential and applicability to semiconductor material polishing
Plasma Assisted Polishing(PAP)
PAP
Unique surface polishing technology for single crystal diamond, SiC, GaN and other hard materials
PA-1100 Equipment
![PA-1100 Equipment image](https://www.j-tec.co.jp/english/wp-content/uploads/sites/3/2023/08/PAP_web.jpg)
Equipment Schematic
![Equipment Schematic](https://www.j-tec.co.jp/wp-content/uploads/2023/03/schematic_en.png)
PAP has demonstrated as a highly efficient and damage-free polishing for single-crystal diamond substrates
Result
Laser Interferometry
![Geometry of a single-crystal diamond substrate polished by PAP method](https://www.j-tec.co.jp/wp-content/uploads/2023/03/laserfig_en.png)
Geometry of a single-crystal diamond substrate polished by PAP
▼
Flatness of 0.5 µm or less achieved
![Difference in height after 3hr. PAP](https://www.j-tec.co.jp/wp-content/uploads/2023/03/Laser02_en.png)
Difference in height after PAP 3h
▼
~13.3μm/h polishing rate achieved
Result Atomic Force Microscope
![AFM画像](https://www.j-tec.co.jp/wp-content/uploads/2023/03/AFM.png)
Root-mean-square roughness after PAP is 0.36nm
▼
Surface roughness of ~0.3nm achieved
Confocal Raman Microscope
![Confocal Raman Microscope graph](https://www.j-tec.co.jp/english/wp-content/uploads/sites/3/2023/08/Confocal-Raman-Microscope_en.png)
No change in the peak position and FWHM
▼
No damage of crystal
observed
▼
No graphite structure
observed
Plasma CVM, CARE, and PAP are proprietary technologies of Osaka University.