Device DevelopmentDevice Development
Advanced surface processing technology on semiconductor material
Plasma CVM
Vapor-phase chemical etching using high-density plasma realizes highly efficient yet distortion -free processing.
CARE
A pad with catalytic functionality flattens materials on an atomic scale in a purely chemical manner.
PAP
PAP accomplished in polishing a 20㎟ world- size class mosaic single-crystal diamond high-efficiently and damage-free.
Plasma Chemical Vaporization Machining
PCVM
JC-1000 System
Transport Unit
Machining
Processing Principle
Highly Efficient and Damage-Free Polishing Method By vapor-phase chemical etching using high-density plasma
Quartz wafer
Pre-processed Quartz wafer:
Commercially available 4inch (100mm) thickness 60μm
Measurement area:
Area within a circle of 100mm diameter
Before NC-PCVM
Standard deviationσ= 17nm
After NC-PCVM
Standard deviationσ= 3nm
Ultra-thin SOI Film
Pre-processed SOI wafer:
Commercially available 8inch (200mm) thin film SOI wafer
(SOI layer: 100nm, embedded oxide film layer: 200nm)
Measurement point:
Area within a circle of 190mm diameter, 5.5mm grid
Before NC-PCVM
97.5±4.7nm
Standard deviationσ= 2.4nm
After NC-PCVM
7.5±1.5nm
Standard deviationσ= 0.38nm
Ultra-thin wafer and highly uniform thickness is realized
CAtalyst Referred Etching
CARE
Pad with catalytic function as a reference surface
Atomically smooth surface planarized in a chemical manner
CA-1000 Equipment
Processing Flow
Selective etching at the topmost areas in contact with the catalyst surface.Improving surface roughness without changing the thickness uniformity
Examples of CARE-processed surfaces
Atomically smooth and damage-free surfaces
High potential and applicability to semiconductor material polishing
Plasma Assisted Polishing(PAP)
PAP
Unique surface polishing technology for single crystal diamond, SiC, GaN and other hard materials
PA-1100 Equipment
Equipment Schematic
PAP has demonstrated as a highly efficient and damage-free polishing for single-crystal diamond substrates
Result
Laser Interferometry
Geometry of a single-crystal diamond substrate polished by PAP
▼
Flatness of 0.5 µm or less achieved
Difference in height after PAP 3h
▼
~13.3μm/h polishing rate achieved
Result Atomic Force Microscope
Root-mean-square roughness after PAP is 0.36nm
▼
Surface roughness of ~0.3nm achieved
Confocal Raman Microscope
No change in the peak position and FWHM
▼
No damage of crystal
observed
▼
No graphite structure
observed
Plasma CVM, CARE, and PAP are proprietary technologies of Osaka University.