Device DevelopmentDevice Development

Advanced surface processing technology on semiconductor material

Plasma CVM

Plasma Chemical Vaporization Machining

Vapor-phase chemical etching using high-density plasma realizes highly efficient yet distortion -free processing.

CARE

CAtalyst Referred Etching

A pad with catalytic functionality flattens materials on an atomic scale in a purely chemical manner.

PAP

Plasma Assisted Polishing

PAP accomplished in polishing a 20㎟ world- size class mosaic single-crystal diamond high-efficiently and damage-free.

Plasma Chemical Vaporization Machining

PCVM

JC-1000 System

大気圧プラズマ加工装置

Transport Unit

Machining

Processing Principle

Highly Efficient and Damage-Free Polishing Method By vapor-phase chemical etching using high-density plasma

Quartz wafer

Pre-processed Quartz wafer:
Commercially available 4inch (100mm) thickness 60μm
Measurement area:
Area within a circle of 100mm diameter

Before NC-PCVM

Quartz before NC-PCVM

Standard deviationσ= 17nm

After NC-PCVM

Quartz after NC-PCVM

Standard deviationσ= 3nm

Ultra-thin SOI Film

Pre-processed SOI wafer:
Commercially available 8inch (200mm) thin film SOI wafer
(SOI layer: 100nm, embedded oxide film layer: 200nm)
Measurement point:
Area within a circle of 190mm diameter, 5.5mm grid

Before NC-PCVM

SOI before NC-PCVM

97.5±4.7nm
Standard deviationσ= 2.4nm

After NC-PCVM

7.5±1.5nm
Standard deviationσ= 0.38nm

Ultra-thin wafer and highly uniform thickness is realized

CAtalyst Referred Etching

CARE

Pad with catalytic function as a reference surface
Atomically smooth surface planarized in a chemical manner

CA-1000 Equipment

触媒表面基準エッチング装置

Processing Flow

Processing Flow

Selective etching at the topmost areas in contact with the catalyst surface.Improving surface roughness without changing the thickness uniformity

Examples of CARE-processed surfaces

ステップテラス
ステップテラス

Atomically smooth and damage-free surfaces
High potential and applicability to semiconductor material polishing

Plasma Assisted Polishing(PAP)

PAP

Unique surface polishing technology for single crystal diamond, SiC, GaN and other hard materials

PA-1100 Equipment

PA-1100 Equipment image

Equipment Schematic

Equipment Schematic

PAP has demonstrated as a highly efficient and damage-free polishing for single-crystal diamond substrates

Result

Laser Interferometry

Geometry of a single-crystal diamond substrate polished by PAP method

Geometry of a single-crystal diamond substrate polished by PAP

Flatness of 0.5 µm or less achieved

Difference in height after 3hr. PAP

Difference in height after PAP 3h

~13.3μm/h polishing rate achieved

Result Atomic Force Microscope

AFM画像

Root-mean-square roughness after PAP is 0.36nm
  

Surface roughness of ~0.3nm achieved

Confocal Raman Microscope

Confocal Raman Microscope gruf

No change in the peak position and FWHM

No damage of crystal
observed

No graphite structure
observed

Plasma CVM, CARE, and PAP are proprietary technologies of Osaka University.